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DMT47M2SFVW-7

DMT47M2SFVW-7 Diodes Incorporated

DMT47M2SFVW.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.41 EUR
6000+0.38 EUR
10000+0.36 EUR
Mindestbestellmenge: 2000
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Technische Details DMT47M2SFVW-7 Diodes Incorporated

Description: MOSFET N-CH 40V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V.

Weitere Produktangebote DMT47M2SFVW-7 nach Preis ab 0.37 EUR bis 1.07 EUR

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DMT47M2SFVW-7 DMT47M2SFVW-7 Hersteller : Diodes Incorporated DIOD_S_A0008533883_1-2543079.pdf MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K
auf Bestellung 3520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.05 EUR
10+0.91 EUR
100+0.63 EUR
500+0.53 EUR
1000+0.45 EUR
2000+0.40 EUR
4000+0.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2SFVW-7 DMT47M2SFVW-7 Hersteller : Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2SFVW-7 Hersteller : DIODES INCORPORATED DMT47M2SFVW.pdf DMT47M2SFVW-7 SMD N channel transistors
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