Technische Details DMT5015LFDF-13 Diodes Inc
Description: MOSFET N-CH 50V 9.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Power Dissipation (Max): 820mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 902.7 pF @ 25 V.
Weitere Produktangebote DMT5015LFDF-13
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| DMT5015LFDF-13 | Hersteller : DIODES INCORPORATED | DMT5015LFDF-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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DMT5015LFDF-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 50V 9.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 902.7 pF @ 25 V |
Produkt ist nicht verfügbar |
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DMT5015LFDF-13 | Hersteller : Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A |
Produkt ist nicht verfügbar |