DMT6004SCT Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 5+ | 4.01 EUR |
| 50+ | 1.98 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.32 EUR |
| 2000+ | 1.23 EUR |
| 5000+ | 1.22 EUR |
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Technische Details DMT6004SCT Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 113W (Tc), Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote DMT6004SCT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMT6004SCT | Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DMT6004SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Case: TO220AB Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 95.4nC On-state resistance: 3.1mΩ Power dissipation: 113W Drain current: 100A Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMT6004SCT |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V
MOSFET MOSFET BVDSS: 41V-60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMT6004SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH