DMT6004SCT Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 14149 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.08 EUR |
| 100+ | 2.54 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.82 EUR |
| 2000+ | 1.73 EUR |
| 5000+ | 1.67 EUR |
| 10000+ | 1.61 EUR |
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Technische Details DMT6004SCT Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V, Power Dissipation (Max): 2.3W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V.
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DMT6004SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Pulsed drain current: 180A Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 113W Gate charge: 95.4nC Kind of channel: enhanced Gate-source voltage: ±20V |
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