DMT6006LSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.55 EUR |
| 5000+ | 0.50 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT6006LSS-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.38W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V.
Weitere Produktangebote DMT6006LSS-13 nach Preis ab 0.63 EUR bis 2.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMT6006LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V |
auf Bestellung 7480 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMT6006LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11.7A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.08W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
 |
DMT6006LSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DMT6006LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11.7A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.08W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A |
Produkt ist nicht verfügbar |