DMT6007LFGQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 15+ | 1.19 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT6007LFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT6007LFGQ-7 nach Preis ab 0.67 EUR bis 2.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMT6007LFGQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2795 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMT6007LFGQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT6007LFGQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 0.0045 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62.5W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0045ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2226 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
DMT6007LFGQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT6007LFGQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 0.0045 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62.5W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0045ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2226 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
DMT6007LFGQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 15A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| DMT6007LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
DMT6007LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 15A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| DMT6007LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
Produkt ist nicht verfügbar |