DMT6007LFGQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 414000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.02 EUR |
| 6000+ | 0.97 EUR |
| 10000+ | 0.93 EUR |
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Technische Details DMT6007LFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT6007LFGQ-7 nach Preis ab 0.98 EUR bis 2.49 EUR
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DMT6007LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 15A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 414742 Stücke: Lieferzeit 21-28 Tag (e) |
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DMT6007LFGQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 8753 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMT6007LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Pulsed drain current: 80A Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Gate charge: 41.3nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMT6007LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Pulsed drain current: 80A Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Gate charge: 41.3nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |