Technische Details DMT6009LFG-13 Diodes Inc
Description: MOSFET N-CH 60V 11A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.
Weitere Produktangebote DMT6009LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT6009LFG-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 11A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMT6009LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 90A Power dissipation: 2.08W Case: PowerDI3333-8 Gate-source voltage: ±16V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMT6009LFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 11A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMT6009LFG-13 | Hersteller : Diodes Incorporated |
MOSFET 60V N-Ch Enh FET Low Rdson |
Produkt ist nicht verfügbar |
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| DMT6009LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 90A Power dissipation: 2.08W Case: PowerDI3333-8 Gate-source voltage: ±16V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |