DMT6009LJ3 Diodes Incorporated

Description: MOSFET N-CH 60V 74.5A TO251, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251 (Type TH), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.9W (Ta), 83.3W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 74.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.