DMT6009LK3-13 Diodes Zetex
auf Bestellung 47500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT6009LK3-13 Diodes Zetex
Description: MOSFET N-CH 60V 13.3A/57A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.
Weitere Produktangebote DMT6009LK3-13 nach Preis ab 0.6 EUR bis 1.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMT6009LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 13.3A/57A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMT6009LK3-13 | Hersteller : Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16Vgss 2.6W 57A |
auf Bestellung 8670 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMT6009LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 13.3A/57A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
auf Bestellung 80742 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMT6009LK3-13 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMT6009LK3-13 | Hersteller : Diodes Inc | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMT6009LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10.6A Pulsed drain current: 90A Power dissipation: 2.6W Case: TO252 Gate-source voltage: ±16V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMT6009LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10.6A Pulsed drain current: 90A Power dissipation: 2.6W Case: TO252 Gate-source voltage: ±16V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |