DMT6009LK3-13 Diodes Zetex
auf Bestellung 47500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.54 EUR |
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Technische Details DMT6009LK3-13 Diodes Zetex
Description: MOSFET N-CH 60V 13.3A/57A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.
Weitere Produktangebote DMT6009LK3-13 nach Preis ab 0.59 EUR bis 2.46 EUR
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DMT6009LK3-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 13.3A/57A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6009LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 13.3A/57A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
auf Bestellung 57339 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6009LK3-13 | Hersteller : Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 16Vgss 2.6W 57A |
auf Bestellung 2167 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6009LK3-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMT6009LK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMT6009LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 10.6A On-state resistance: 12.8mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 90A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT6009LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 10.6A On-state resistance: 12.8mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |