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DMT6009LSS-13

DMT6009LSS-13 Diodes Zetex


1133dmt6009lss.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 10.8A 8-Pin SO T/R
auf Bestellung 22500 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.57 EUR
Mindestbestellmenge: 2500
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Technische Details DMT6009LSS-13 Diodes Zetex

Description: MOSFET N-CH 60V 10.8A 8SO T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.

Weitere Produktangebote DMT6009LSS-13 nach Preis ab 0.6 EUR bis 1.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Incorporated DMT6009LSS.pdf Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.66 EUR
5000+ 0.63 EUR
12500+ 0.6 EUR
Mindestbestellmenge: 2500
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Zetex 1133dmt6009lss.pdf Trans MOSFET N-CH 60V 10.8A 8-Pin SO T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+1.03 EUR
Mindestbestellmenge: 2500
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Incorporated DMT6009LSS.pdf MOSFET 60V N-Ch Enh FET 20Vgss 12mOhm 4.5Vgs
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.59 EUR
10+ 1.29 EUR
100+ 1.01 EUR
500+ 0.85 EUR
1000+ 0.69 EUR
2500+ 0.62 EUR
Mindestbestellmenge: 2
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Incorporated DMT6009LSS.pdf Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 26155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
14+ 1.3 EUR
100+ 1.01 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 11
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Zetex 1133dmt6009lss.pdf Trans MOSFET N-CH 60V 10.8A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Zetex 1133dmt6009lss.pdf Trans MOSFET N-CH 60V 10.8A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT6009LSS-13 DMT6009LSS-13 Hersteller : Diodes Inc 1133dmt6009lss.pdf Trans MOSFET N-CH 60V 10.8A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT6009LSS-13 DMT6009LSS-13 Hersteller : DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.5A
Pulsed drain current: 60A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT6009LSS-13 DMT6009LSS-13 Hersteller : DIODES INCORPORATED DMT6009LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.5A
Pulsed drain current: 60A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar