
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2500+ | 0.54 EUR |
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Technische Details DMT6009LSS-13 Diodes Zetex
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.
Weitere Produktangebote DMT6009LSS-13 nach Preis ab 0.56 EUR bis 1.57 EUR
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DMT6009LSS-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6009LSS-13 | Hersteller : Diodes Zetex |
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auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT6009LSS-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
auf Bestellung 14822 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6009LSS-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 4470 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6009LSS-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMT6009LSS-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMT6009LSS-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMT6009LSS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11.5A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT6009LSS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11.5A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |