DMT6010LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.60 EUR |
| 5000+ | 0.58 EUR |
| 7500+ | 0.57 EUR |
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Technische Details DMT6010LPS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V.
Weitere Produktangebote DMT6010LPS-13 nach Preis ab 0.64 EUR bis 1.59 EUR
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DMT6010LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
auf Bestellung 13075 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6010LPS-13 | Hersteller : Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 60Vdss 20Vgss 80A |
auf Bestellung 4175 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6010LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 125A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT6010LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 125A |
Produkt ist nicht verfügbar |