auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.91 EUR |
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Technische Details DMT6010SCT Diodes Incorporated
Description: MOSFET N-CH 60V 98A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V.
Weitere Produktangebote DMT6010SCT nach Preis ab 0.88 EUR bis 3.26 EUR
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DMT6010SCT | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 98A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V |
auf Bestellung 5850 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6010SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3 Case: TO220-3 Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 36.3nC On-state resistance: 7.2mΩ Power dissipation: 104W Drain current: 98A Gate-source voltage: ±20V Pulsed drain current: 160A Drain-source voltage: 60V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMT6010SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3 Case: TO220-3 Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 36.3nC On-state resistance: 7.2mΩ Power dissipation: 104W Drain current: 98A Gate-source voltage: ±20V Pulsed drain current: 160A Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |