DMT6010SCT Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 98A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
Description: MOSFET N-CH 60V 98A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
auf Bestellung 5947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.25 EUR |
100+ | 1.79 EUR |
500+ | 1.51 EUR |
1000+ | 1.23 EUR |
2000+ | 1.16 EUR |
5000+ | 1.11 EUR |
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Technische Details DMT6010SCT Diodes Incorporated
Description: MOSFET N-CH 60V 98A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V.
Weitere Produktangebote DMT6010SCT nach Preis ab 1.45 EUR bis 3.38 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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DMT6010SCT | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 447 Stücke: Lieferzeit 14-28 Tag (e) |
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DMT6010SCT | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Type of transistor: N-MOSFET Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT6010SCT | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Type of transistor: N-MOSFET Kind of channel: enhanced |
Produkt ist nicht verfügbar |