DMT6012LPSW-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.31 EUR |
| 7500+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT6012LPSW-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V.
Weitere Produktangebote DMT6012LPSW-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT6012LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Mounting: SMD Gate charge: 22.2nC Drain-source voltage: 60V Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Polarisation: unipolar Power dissipation: 3.1W Type of transistor: N-MOSFET On-state resistance: 17mΩ Drain current: 10.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMT6012LPSW-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K |
Produkt ist nicht verfügbar |
|
| DMT6012LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Mounting: SMD Gate charge: 22.2nC Drain-source voltage: 60V Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Polarisation: unipolar Power dissipation: 3.1W Type of transistor: N-MOSFET On-state resistance: 17mΩ Drain current: 10.5A |
Produkt ist nicht verfügbar |