auf Bestellung 2546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.90 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.30 EUR |
| 10000+ | 0.27 EUR |
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Technische Details DMT6013LSS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V.
Weitere Produktangebote DMT6013LSS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT6013LSS-13 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 60V 10A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMT6013LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 6.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT6013LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMT6013LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 6.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |