DMT6015LFV-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.34 EUR |
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Technische Details DMT6015LFV-7 Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 2.2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V.
Weitere Produktangebote DMT6015LFV-7 nach Preis ab 0.33 EUR bis 1.46 EUR
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DMT6015LFV-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6015LFV-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 2.2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V |
auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6015LFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 18.9nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMT6015LFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 18.9nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |