DMT6015LFVW-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 15.7nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 127A
Anzahl je Verpackung: 1 Stücke
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Technische Details DMT6015LFVW-7 DIODES INCORPORATED
Description: MOSFET BVDSS: 41V~60V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V.
Weitere Produktangebote DMT6015LFVW-7
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DMT6015LFVW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V |
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DMT6015LFVW-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI3333-8/SWP T&R 2K |
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| DMT6015LFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 8A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 15.7nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 127A |
Produkt ist nicht verfügbar |