DMT6015LPDW-13 Diodes Inc

Description: MOSFET 2N-CH 60V 9.4A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 7.9W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V, Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD).