DMT6017LFDF-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details DMT6017LFDF-13 Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT6017LFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMT6017LFDF-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT6017LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 23mΩ Power dissipation: 1.76W Drain current: 6.5A Gate-source voltage: ±16V Pulsed drain current: 50A Drain-source voltage: 65V Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT6017LFDF-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
MOSFETs MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT6017LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 23mΩ
Power dissipation: 1.76W
Drain current: 6.5A
Gate-source voltage: ±16V
Pulsed drain current: 50A
Drain-source voltage: 65V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 23mΩ
Power dissipation: 1.76W
Drain current: 6.5A
Gate-source voltage: ±16V
Pulsed drain current: 50A
Drain-source voltage: 65V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH