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DMT6018LDR-13

DMT6018LDR-13 Diodes Incorporated

DIOD_S_A0003551352_1-2542444.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 36829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.50 EUR
10+1.16 EUR
100+0.80 EUR
500+0.64 EUR
1000+0.55 EUR
2500+0.54 EUR
5000+0.53 EUR
Mindestbestellmenge: 2
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Technische Details DMT6018LDR-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 8.8A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V, Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8.

Weitere Produktangebote DMT6018LDR-13 nach Preis ab 0.49 EUR bis 1.50 EUR

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DMT6018LDR-13 Hersteller : Diodes Incorporated DMT6018LDR.pdf Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.49 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMT6018LDR-13 Hersteller : Diodes Incorporated DMT6018LDR.pdf Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
auf Bestellung 57750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
16+1.15 EUR
100+0.79 EUR
500+0.67 EUR
1000+0.56 EUR
5000+0.52 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMT6018LDR-13 Hersteller : DIODES INCORPORATED DMT6018LDR.pdf DMT6018LDR-13 SMD N channel transistors
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