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DMT6018LDR-13

DMT6018LDR-13 Diodes Incorporated

DIOD_S_A0003551352_1-2542444.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 36859 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.23 EUR
27+ 1.93 EUR
100+ 1.34 EUR
500+ 1.12 EUR
1000+ 0.85 EUR
5000+ 0.8 EUR
10000+ 0.77 EUR
Mindestbestellmenge: 24
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Technische Details DMT6018LDR-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 8.8A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V, Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8.

Weitere Produktangebote DMT6018LDR-13 nach Preis ab 0.51 EUR bis 1.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT6018LDR-13 Hersteller : Diodes Incorporated DMT6018LDR.pdf Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.51 EUR
Mindestbestellmenge: 10000
DMT6018LDR-13 Hersteller : Diodes Incorporated DMT6018LDR.pdf Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
auf Bestellung 79955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
100+ 1.14 EUR
500+ 0.95 EUR
1000+ 0.81 EUR
2000+ 0.72 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 12
DMT6018LDR-13 Hersteller : DIODES INCORPORATED DMT6018LDR.pdf DMT6018LDR-13 SMD N channel transistors
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