auf Bestellung 8553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.07 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.58 EUR |
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Technische Details DMT6018LDR-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.8A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V, Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8, Part Status: Active.
Weitere Produktangebote DMT6018LDR-7 nach Preis ab 0.55 EUR bis 1.07 EUR
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| DMT6018LDR-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 8.8A 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 8.8A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active |
auf Bestellung 6615 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-7 | Hersteller : DIODES INCORPORATED |
DMT6018LDR-7 SMD N channel transistors |
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