DMT616MLSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.26 EUR |
| 5000+ | 0.24 EUR |
| 7500+ | 0.23 EUR |
| 12500+ | 0.21 EUR |
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Technische Details DMT616MLSS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V, Power Dissipation (Max): 1.39W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT616MLSS-13 | Hersteller : DIODES INCORPORATED |
DMT616MLSS-13 SMD N channel transistors |
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