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DMT64M2LPSW-13

DMT64M2LPSW-13 Diodes Incorporated

DMT64M2LPSW.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
5000+0.61 EUR
12500+0.58 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT64M2LPSW-13 Diodes Incorporated

Description: MOSFET N-CH 60V 20.7A/100A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type Q), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V.

Weitere Produktangebote DMT64M2LPSW-13 nach Preis ab 0.63 EUR bis 2.22 EUR

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DMT64M2LPSW-13 DMT64M2LPSW-13 Hersteller : Diodes Incorporated DMT64M2LPSW.pdf Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
auf Bestellung 192490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
14+1.27 EUR
100+0.99 EUR
500+0.84 EUR
1000+0.68 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMT64M2LPSW-13 DMT64M2LPSW-13 Hersteller : Diodes Incorporated DIOD_S_A0009150516_1-2543209.pdf MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 2085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.22 EUR
10+1.49 EUR
100+1.01 EUR
500+0.80 EUR
1000+0.73 EUR
2500+0.64 EUR
5000+0.63 EUR
Mindestbestellmenge: 2
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DMT64M2LPSW-13 Hersteller : DIODES INCORPORATED DMT64M2LPSW.pdf DMT64M2LPSW-13 SMD N channel transistors
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