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DMT64M2LPSW-13

DMT64M2LPSW-13 Diodes Incorporated


DMT64M2LPSW.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.61 EUR
5000+0.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT64M2LPSW-13 Diodes Incorporated

Description: MOSFET N-CH 60V 20.7A/100A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type Q), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V.

Weitere Produktangebote DMT64M2LPSW-13 nach Preis ab 0.63 EUR bis 2.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT64M2LPSW-13 DMT64M2LPSW-13 Hersteller : Diodes Incorporated DMT64M2LPSW.pdf Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
auf Bestellung 7412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.34 EUR
100+0.97 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMT64M2LPSW-13 DMT64M2LPSW-13 Hersteller : Diodes Incorporated DIOD_S_A0009150516_1-2543209.pdf MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 2085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.22 EUR
10+1.47 EUR
100+1.03 EUR
500+0.84 EUR
1000+0.75 EUR
2500+0.66 EUR
5000+0.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMT64M2LPSW-13 Hersteller : DIODES INCORPORATED DMT64M2LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Mounting: SMD
Gate charge: 46.7nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 6.4mΩ
Drain current: 16.6A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT64M2LPSW-13 Hersteller : DIODES INCORPORATED DMT64M2LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Mounting: SMD
Gate charge: 46.7nC
Drain-source voltage: 60V
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Polarisation: unipolar
Power dissipation: 2.8W
Type of transistor: N-MOSFET
On-state resistance: 6.4mΩ
Drain current: 16.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH