DMT67M8LPSW-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 17.3A/82A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
auf Bestellung 145000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.58 EUR |
| 5000+ | 0.55 EUR |
| 12500+ | 0.52 EUR |
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Technische Details DMT67M8LPSW-13 Diodes Incorporated
Description: MOSFET N-CH 60V 17.3A/82A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type Q), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V.
Weitere Produktangebote DMT67M8LPSW-13 nach Preis ab 0.56 EUR bis 1.42 EUR
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DMT67M8LPSW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 17.3A/82A PWRDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V |
auf Bestellung 147455 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT67M8LPSW-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2301 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT67M8LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W Kind of package: reel; tape Pulsed drain current: 320A Power dissipation: 2.8W Gate charge: 37.5nC Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 8.5mΩ Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT67M8LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W Kind of package: reel; tape Pulsed drain current: 320A Power dissipation: 2.8W Gate charge: 37.5nC Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 8.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |