| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 1.71 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.81 EUR |
| 2000+ | 0.74 EUR |
| 4000+ | 0.67 EUR |
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Technische Details DMT68M8LFV-7 Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V.
Weitere Produktangebote DMT68M8LFV-7 nach Preis ab 1.21 EUR bis 2.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMT68M8LFV-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 54.1A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 1316 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT68M8LFV-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 1316 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.92 EUR |
| 12+ | 1.83 EUR |
| 25+ | 1.55 EUR |
| 50+ | 1.37 EUR |
| 100+ | 1.21 EUR |