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DMT68M8LFV-7

DMT68M8LFV-7 Diodes Incorporated

DMT68M8LFV.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.44 EUR
4000+0.42 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT68M8LFV-7 Diodes Incorporated

Description: MOSFET N-CH 60V 54.1A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V.

Weitere Produktangebote DMT68M8LFV-7 nach Preis ab 0.43 EUR bis 1.74 EUR

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Preis
DMT68M8LFV-7 DMT68M8LFV-7 Hersteller : Diodes Incorporated diodes inc_diod-s-a0007810738-1.pdf MOSFETs MOSFET BVDSS 41V-60V
auf Bestellung 599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.71 EUR
10+1.1 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMT68M8LFV-7 DMT68M8LFV-7 Hersteller : Diodes Incorporated DMT68M8LFV.pdf Description: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 5736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
16+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMT68M8LFV-7 DMT68M8LFV-7 Hersteller : Diodes Inc pgurl_dmt68m8lfv-7.pdf Trans MOSFET N-CH 60V 54.1A 8-Pin PowerDI EP T/R
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DMT68M8LFV-7 Hersteller : DIODES INCORPORATED DMT68M8LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Pulsed drain current: 210A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 13.3mΩ
Power dissipation: 2.7W
Drain current: 43.3A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH