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DMT68M8LSS-13

DMT68M8LSS-13 Diodes Incorporated

DMT68M8LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 28.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.28 EUR
Mindestbestellmenge: 2500
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Technische Details DMT68M8LSS-13 Diodes Incorporated

Description: MOSFET N-CHANNEL 60V 28.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V.

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DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : Diodes Incorporated DMT68M8LSS.pdf Description: MOSFET N-CHANNEL 60V 28.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
24+0.74 EUR
100+0.50 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : Diodes Incorporated DIOD_S_A0003132569_1-2542338.pdf MOSFET MOSFETBVDSS: 41V-60V
auf Bestellung 7005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.98 EUR
10+0.85 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.37 EUR
2500+0.35 EUR
10000+0.32 EUR
Mindestbestellmenge: 3
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DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : Diodes Inc dmt68m8lss.pdf Trans MOSFET N-CH 60V 12.1A 8-Pin SO T/R
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DMT68M8LSS-13 Hersteller : DIODES INCORPORATED DMT68M8LSS.pdf DMT68M8LSS-13 SMD N channel transistors
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