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DMT68M8LSS-13

DMT68M8LSS-13 Diodes Incorporated

DMT68M8LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 28.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
5000+0.3 EUR
7500+0.29 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT68M8LSS-13 Diodes Incorporated

Description: MOSFET N-CHANNEL 60V 28.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V.

Weitere Produktangebote DMT68M8LSS-13 nach Preis ab 0.3 EUR bis 0.93 EUR

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Preis
DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : Diodes Incorporated DMT68M8LSS.pdf MOSFETs MOSFETBVDSS: 41V-60V
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.92 EUR
10+0.7 EUR
100+0.48 EUR
500+0.42 EUR
1000+0.38 EUR
2500+0.35 EUR
5000+0.3 EUR
Mindestbestellmenge: 4
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DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : Diodes Incorporated DMT68M8LSS.pdf Description: MOSFET N-CHANNEL 60V 28.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
auf Bestellung 9140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
25+0.71 EUR
100+0.49 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 19
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DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : Diodes Inc dmt68m8lss.pdf Trans MOSFET N-CH 60V 12.1A 8-Pin SO T/R
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DMT68M8LSS-13 DMT68M8LSS-13 Hersteller : DIODES INCORPORATED DMT68M8LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Gate charge: 31.8nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH