DMT69M5LCG-7 Diodes Incorporated
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.42 EUR |
| 4000+ | 0.41 EUR |
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Technische Details DMT69M5LCG-7 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.37W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: V-DFN3333-8 (Type B), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT69M5LCG-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 61V~100V V-DFN3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Power Dissipation (Max): 1.37W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V |
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