DMT69M5LCG-7 Diodes Incorporated
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.42 EUR |
| 4000+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT69M5LCG-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 28.4nC, On-state resistance: 12.5mΩ, Power dissipation: 2.64W, Drain current: 11.7A, Gate-source voltage: ±20V, Drain-source voltage: 60V, Pulsed drain current: 208A, Kind of package: 7 inch reel; tape, Case: V-DFN3333-8.
Weitere Produktangebote DMT69M5LCG-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT69M5LCG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28.4nC On-state resistance: 12.5mΩ Power dissipation: 2.64W Drain current: 11.7A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 208A Kind of package: 7 inch reel; tape Case: V-DFN3333-8 |
Produkt ist nicht verfügbar |