DMT69M5LFVWQ-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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Technische Details DMT69M5LFVWQ-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 28.4nC, On-state resistance: 12.5mΩ, Power dissipation: 2.74W, Drain current: 11.9A, Gate-source voltage: ±20V, Drain-source voltage: 60V, Pulsed drain current: 160A, Kind of package: 13 inch reel; tape, Application: automotive industry, Case: PowerDI3333-8.