auf Bestellung 20364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.13 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.49 EUR |
| 3000+ | 0.42 EUR |
| 6000+ | 0.41 EUR |
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Technische Details DMT69M8LFV-13 Diodes Incorporated
Description: MOSFET N-CH 60V 45A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMT69M8LFV-13 nach Preis ab 0.50 EUR bis 1.78 EUR
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DMT69M8LFV-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 45A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 2394 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT69M8LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMT69M8LFV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 45A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMT69M8LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |