DMT8008LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.77 EUR |
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Technische Details DMT8008LK3-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT8008LK3-13 | Hersteller : Diodes Inc |
MOSFET BVDSS: 61V100V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMT8008LK3-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |