DMT8008SPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 80V 83A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT8008SPS-13 Diodes Incorporated
Description: MOSFET N-CH 80V 83A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V, Power Dissipation (Max): 1.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V.
Weitere Produktangebote DMT8008SPS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMT8008SPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 80V 83A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|
| DMT8008SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Mounting: SMD Drain-source voltage: 80V Drain current: 66A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 330A Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMT8008SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
Produkt ist nicht verfügbar |
|
| DMT8008SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Mounting: SMD Drain-source voltage: 80V Drain current: 66A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 330A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |