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DMT8012LSS-13

DMT8012LSS-13 Diodes Incorporated

DMT8012LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 9.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
5000+0.55 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT8012LSS-13 Diodes Incorporated

Description: MOSFET N-CH 80V 9.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT8012LSS-13 nach Preis ab 0.57 EUR bis 2.02 EUR

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DMT8012LSS-13 DMT8012LSS-13 Hersteller : Diodes Incorporated DMT8012LSS.pdf Description: MOSFET N-CH 80V 9.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.25 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMT8012LSS-13 DMT8012LSS-13 Hersteller : Diodes Incorporated DMT8012LSS.pdf MOSFETs MOSFET BVDSS: 61V-100V
auf Bestellung 2140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.02 EUR
10+1.29 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.65 EUR
2500+0.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMT8012LSS-13 DMT8012LSS-13 Hersteller : Diodes Inc 2730dmt8012lss.pdf Trans MOSFET N-CH 80V 9.7A 8-Pin SO T/R
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DMT8012LSS-13 DMT8012LSS-13 Hersteller : DIODES INCORPORATED DMT8012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 7.8A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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