DMTH10H009LFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.27 EUR |
| 10+ | 2.71 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.05 EUR |
| 100+ | 1.83 EUR |
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Technische Details DMTH10H009LFG-7 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V.
Weitere Produktangebote DMTH10H009LFG-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMTH10H009LFG-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMTH10H009LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.5W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Power dissipation: 2.5W Case: PowerDI3333-8 On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 41nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMTH10H009LFG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMTH10H009LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.5W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.5W
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 41nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.5W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2.5W
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 41nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH