| Anzahl | Preis |
|---|---|
| 1+ | 3.01 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.77 EUR |
| 5000+ | 0.75 EUR |
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Technische Details DMTH10H010LPS-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V, Power Dissipation (Max): 1.5W, 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V.
Weitere Produktangebote DMTH10H010LPS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMTH10H010LPS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V Power Dissipation (Max): 1.5W, 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V |
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