DMTH10H010SPS-13 Diodes Zetex
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.71 EUR |
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Technische Details DMTH10H010SPS-13 Diodes Zetex
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H010SPS-13 nach Preis ab 0.80 EUR bis 3.03 EUR
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DMTH10H010SPS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H010SPS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V |
auf Bestellung 7121 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H010SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 9865 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H010SPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH10H010SPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 123 A, 0.0066 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 123A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 166W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2397 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH10H010SPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH10H010SPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 123 A, 0.0066 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 123A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 166W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2397 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH10H010SPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 15A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMTH10H010SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Power dissipation: 1.5W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 56.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 250A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH10H010SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Power dissipation: 1.5W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 56.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 250A |
Produkt ist nicht verfügbar |