DMTH10H015SPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 100V PWRDI5060, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 55W (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc), FET Type: N-Channel.