Technische Details DMTH10H015SPSQ-13 Diodes Zetex
Description: MOSFET N-CH 100V PWRDI5060, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 55W (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc), FET Type: N-Channel.
Weitere Produktangebote DMTH10H015SPSQ-13 nach Preis ab 1.06 EUR bis 1.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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DMTH10H015SPSQ-13 | Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI5060Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc) FET Type: N-Channel |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH10H015SPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 100V PWRDI5060
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
FET Type: N-Channel
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.06 EUR |