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DMTH10H015SPSQ-13

DMTH10H015SPSQ-13 Diodes Incorporated

DMTH10H015SPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.89 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH10H015SPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V.

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DMTH10H015SPSQ-13 Hersteller : Diodes Incorporated DMTH10H015SPSQ.pdf MOSFET MOSFET BVDSS: 61V-100V
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