DMTH10H017LPD-13 DIODES INC.
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH10H017LPD-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 59 A, 59 A, 0.0174 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 59A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2.6W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0174ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2.6W
Betriebstemperatur, max.: 175°C
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.25 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH10H017LPD-13 DIODES INC.
Description: DIODES INC. - DMTH10H017LPD-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 59 A, 59 A, 0.0174 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 59A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 100V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 59A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 2.6W, Drain-Source-Spannung Vds, n-Kanal: 100V, SVHC: Lead (25-Jun-2025), Bauform - Transistor: PowerDI5060, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0174ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2.6W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote DMTH10H017LPD-13 nach Preis ab 1.08 EUR bis 6.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMTH10H017LPD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H017LPD-13 | DIODES INC. |
Description: DIODES INC. - DMTH10H017LPD-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 59 A, 59 A, 0.0174 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 59A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 59A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 2.6W Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0174ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.6W Betriebstemperatur, max.: 175°C |
auf Bestellung 1823 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH10H017LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 59A POWERDI50 Supplier Device Package: PowerDI5060-8 (Type E) Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 2.6W (Ta), 93W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 212500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH10H017LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 59A POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) |
auf Bestellung 214744 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH10H017LPD-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.46 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.3 EUR |
| 5000+ | 1.2 EUR |
| DMTH10H017LPD-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMTH10H017LPD-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 59 A, 59 A, 0.0174 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 59A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2.6W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0174ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2.6W
Betriebstemperatur, max.: 175°C
Description: DIODES INC. - DMTH10H017LPD-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 59 A, 59 A, 0.0174 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 59A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2.6W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0174ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2.6W
Betriebstemperatur, max.: 175°C
auf Bestellung 1823 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 6.57 EUR |
| 59+ | 3.95 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.74 EUR |
| DMTH10H017LPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50
Supplier Device Package: PowerDI5060-8 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.6W (Ta), 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 100V 59A POWERDI50
Supplier Device Package: PowerDI5060-8 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.6W (Ta), 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 212500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.15 EUR |
| 5000+ | 1.11 EUR |
| 12500+ | 1.08 EUR |
| DMTH10H017LPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
auf Bestellung 214744 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.23 EUR |