DMTH10H017LPDQ-13 Diodes Zetex
auf Bestellung 1030000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.95 EUR |
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Technische Details DMTH10H017LPDQ-13 Diodes Zetex
Description: MOSFET 2N-CH 100V 13A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), 93W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type E), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H017LPDQ-13 nach Preis ab 1.08 EUR bis 3.63 EUR
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DMTH10H017LPDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 100V 13A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 85000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H017LPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 100V 13A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 86435 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H017LPDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 13A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMTH10H017LPDQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 13A Automotive 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMTH10H017LPDQ-13 | Hersteller : DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMTH10H017LPDQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |