DMTH10H025SK3-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 46.3A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.48 EUR |
| 7500+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH10H025SK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 46.3A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H025SK3-13 nach Preis ab 0.46 EUR bis 2.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMTH10H025SK3-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V TO252 T and R 2.5K |
auf Bestellung 3344 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H025SK3-13 | DIODES INC. |
Description: DIODES INC. - DMTH10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 46.3 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 46.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0178ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 4210 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH10H025SK3-13 | DIODES INC. |
Description: DIODES INC. - DMTH10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 46.3 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 46.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0178ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 4210 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH10H025SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 46.3A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 11895 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V~100V TO252 T and R 2.5K
MOSFETs MOSFET BVDSS: 61V~100V TO252 T and R 2.5K
auf Bestellung 3344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.56 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.52 EUR |
| 5000+ | 0.46 EUR |
| DMTH10H025SK3-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 46.3 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 46.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0178ohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMTH10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 46.3 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 46.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0178ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 4210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 1.84 EUR |
| 197+ | 1.18 EUR |
| 289+ | 0.74 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| DMTH10H025SK3-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 46.3 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 46.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0178ohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMTH10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 46.3 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 46.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0178ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 4210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 1.84 EUR |
| 197+ | 1.18 EUR |
| 289+ | 0.74 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| DMTH10H025SK3-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 46.3A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 46.3A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 11895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 17+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |