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DMTH10H032LPSWQ-13

DMTH10H032LPSWQ-13 Diodes Incorporated

DMTH10H032LPSWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.44 EUR
5000+0.41 EUR
7500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH10H032LPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.4W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH10H032LPSWQ-13 nach Preis ab 0.39 EUR bis 1.76 EUR

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DMTH10H032LPSWQ-13 DMTH10H032LPSWQ-13 Hersteller : Diodes Incorporated DMTH10H032LPSWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 12457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
17+1.09 EUR
100+0.72 EUR
500+0.55 EUR
1000+0.50 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H032LPSWQ-13 Hersteller : Diodes Incorporated DMTH10H032LPSWQ-3103815.pdf MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.10 EUR
10+0.96 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.48 EUR
2500+0.41 EUR
5000+0.39 EUR
Mindestbestellmenge: 3
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DMTH10H032LPSWQ-13 Hersteller : DIODES INCORPORATED DMTH10H032LPSWQ.pdf DMTH10H032LPSWQ-13 SMD N channel transistors
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