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DMTH10H038SPDW-13

DMTH10H038SPDW-13 Diodes Incorporated

DMTH10H038SPDW.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 25A PWRDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.62 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH10H038SPDW-13 Diodes Incorporated

Description: MOSFET 2N-CH 100V 25A PWRDI50, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W (Ta), 39W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V, Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD).

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DMTH10H038SPDW-13 Hersteller : Diodes Incorporated DMTH10H038SPDW-2940766.pdf MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8/SWP T&R 2.5K
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