DMTH10H038SPDW-13 Diodes Incorporated

Description: MOSFET 2N-CH 100V 25A PWRDI50, Supplier Device Package: PowerDI5060-8 (Type UXD), Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drain to Source Voltage (Vdss): 100V, Power - Max: 2.7W (Ta), 39W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.