DMTH10H2M5STLWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V,POWERDI10, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: POWERDI1012-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.