DMTH10H4M5LPS-13 Diodes Incorporated
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Technische Details DMTH10H4M5LPS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 80nC, On-state resistance: 6.2mΩ, Power dissipation: 2.7W, Drain current: 14A, Gate-source voltage: ±20V, Drain-source voltage: 100V, Pulsed drain current: 400A, Kind of package: 13 inch reel; tape, Case: PowerDI5060-8.
Weitere Produktangebote DMTH10H4M5LPS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMTH10H4M5LPS-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC On-state resistance: 6.2mΩ Power dissipation: 2.7W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 100V Pulsed drain current: 400A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 |
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