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DMTH15H017LPSW-13

DMTH15H017LPSW-13 Diodes Incorporated

DMTH15H017LPSW.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.08 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH15H017LPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 101V~250V POWERDI5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.5W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V.

Weitere Produktangebote DMTH15H017LPSW-13 nach Preis ab 1.32 EUR bis 3.8 EUR

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DMTH15H017LPSW-13 DMTH15H017LPSW-13 Hersteller : Diodes Incorporated DMTH15H017LPSW.pdf Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
auf Bestellung 5968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.8 EUR
10+2.44 EUR
100+1.67 EUR
500+1.34 EUR
1000+1.32 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMTH15H017LPSW-13 Hersteller : Diodes Incorporated DMTH15H017LPSW-3103826.pdf MOSFETs MOSFET BVDSS: 101V~250V PowerDI5060-8/SWP T&R 2.5K
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