DMTH4007SPDQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 14.2A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 320000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.89 EUR |
| 5000+ | 0.85 EUR |
| 12500+ | 0.81 EUR |
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Technische Details DMTH4007SPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 14.2A, Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active.
Weitere Produktangebote DMTH4007SPDQ-13 nach Preis ab 0.93 EUR bis 2.18 EUR
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DMTH4007SPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 14.2A POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
auf Bestellung 320000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4007SPDQ-13 | Hersteller : Diodes Incorporated |
MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4007SPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.6W Polarisation: unipolar Drain current: 11.9A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.6mΩ Pulsed drain current: 90A Gate charge: 41.9nC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007SPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.6W Polarisation: unipolar Drain current: 11.9A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.6mΩ Pulsed drain current: 90A Gate charge: 41.9nC |
Produkt ist nicht verfügbar |