DMTH4007SPDQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details DMTH4007SPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50, Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 14.2A, Drain to Source Voltage (Vdss): 40V, Power - Max: 2.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH4007SPDQ-13 nach Preis ab 0.95 EUR bis 3.71 EUR
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DMTH4007SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 14.2A PWRDI50 Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Current - Continuous Drain (Id) @ 25°C: 14.2A Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 415399 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4007SPDQ-13 | Diodes Incorporated |
MOSFETs 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A |
auf Bestellung 861 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH4007SPDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 415399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.03 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.95 EUR |
| DMTH4007SPDQ-13 |
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Hersteller: Diodes Incorporated
MOSFETs 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A
MOSFETs 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.24 EUR |
| 2500+ | 1.17 EUR |
| 5000+ | 1.11 EUR |