DMTH4008LFDFWQ-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.32 EUR |
| 5000+ | 0.29 EUR |
| 10000+ | 0.27 EUR |
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Technische Details DMTH4008LFDFWQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 990mW (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH4008LFDFWQ-13 nach Preis ab 0.4 EUR bis 1.53 EUR
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DMTH4008LFDFWQ-13 | Diodes Incorporated |
 Description: MOSFET N-CH 40V 11.6A 6UDFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 4803 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4008LFDFWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.4 EUR |