DMTH4008LFDFWQ-13 Diodes Zetex
auf Bestellung 290000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.30 EUR |
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Technische Details DMTH4008LFDFWQ-13 Diodes Zetex
Description: MOSFET N-CH 40V 11.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V, Power Dissipation (Max): 990mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4008LFDFWQ-13 nach Preis ab 0.34 EUR bis 1.53 EUR
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 31V-40V U-DFN2020-6 T&R 10K |
auf Bestellung 2165 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4803 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH4008LFDFWQ-13 - Leistungs-MOSFET, n-Kanal, 40 V, 11.6 A, 0.0091 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 990mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0091ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 8820 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH4008LFDFWQ-13 - Leistungs-MOSFET, n-Kanal, 40 V, 11.6 A, 0.0091 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 990mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0091ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 8820 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 11.6A Automotive AEC-Q101 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMTH4008LFDFWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 8.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.35W Polarisation: unipolar Gate charge: 14.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMTH4008LFDFWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 8.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.35W Polarisation: unipolar Gate charge: 14.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
Produkt ist nicht verfügbar |