DMTH4008LFDFWQ-13 Diodes Incorporated
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.37 EUR |
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Technische Details DMTH4008LFDFWQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V, Power Dissipation (Max): 990mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4008LFDFWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 40V 11.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 328928 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 320000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4008LFDFWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4008LFDFWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |