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DMTH4008LFDFWQ-7

DMTH4008LFDFWQ-7 Diodes Incorporated


DMTH4008LFDFWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Grade: Automotive
Package / Case: 6-UDFN Exposed Pad
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH4008LFDFWQ-7 Diodes Incorporated

Description: MOSFET N-CH 40V 11.6A 6UDFN, Grade: Automotive, Package / Case: 6-UDFN Exposed Pad, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 990mW (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMTH4008LFDFWQ-7 nach Preis ab 0.43 EUR bis 1.53 EUR

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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-7 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4295 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH