DMTH4008LPDWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.52 EUR |
| 5000+ | 0.48 EUR |
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Technische Details DMTH4008LPDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.67W (Ta), 39.4W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V, Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4008LPDWQ-13 nach Preis ab 0.48 EUR bis 1.99 EUR
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DMTH4008LPDWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.67W (Ta), 39.4W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7410 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4008LPDWQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4008LPDWQ-13 | Hersteller : Diodes Inc |
MOSFET BVDSS: 31V40V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4008LPDWQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 10A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMTH4008LPDWQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.1A Pulsed drain current: 184A Power dissipation: 2.67W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4008LPDWQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.1A Pulsed drain current: 184A Power dissipation: 2.67W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |