DMTH4008LPS-13 Diodes Incorporated

Description: MOSFET N-CH 40V PWRDI5060, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).