auf Bestellung 4801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.91 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.32 EUR |
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Technische Details DMTH4008LPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4008LPS-13 nach Preis ab 0.43 EUR bis 0.92 EUR
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DMTH4008LPS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 40V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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| DMTH4008LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 13mΩ Power dissipation: 2.99W Drain current: 10.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 110A |
Produkt ist nicht verfügbar |