DMTH4008LPSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 675000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.49 EUR |
| 12500+ | 0.45 EUR |
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Technische Details DMTH4008LPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4008LPSQ-13 nach Preis ab 0.5 EUR bis 1.36 EUR
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DMTH4008LPSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 2585 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 675000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4008LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.2A Pulsed drain current: 110A Power dissipation: 2.99W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4008LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.2A Pulsed drain current: 110A Power dissipation: 2.99W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |