| Anzahl | Preis |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.28 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.53 EUR |
| 5000+ | 0.47 EUR |
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Technische Details DMTH4014LPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.41W (Ta), 42.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4014LPDQ-13 nach Preis ab 0.6 EUR bis 2.04 EUR
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DMTH4014LPDQ-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 40V 10.6A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.41W (Ta), 42.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2305 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH4014LPDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 14+ | 1.28 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |