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DMTH4014LPDQ-13

DMTH4014LPDQ-13 Diodes Incorporated

DMTH4014LPDQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 422500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH4014LPDQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 40V 10.6A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.41W (Ta), 42.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH4014LPDQ-13 nach Preis ab 0.44 EUR bis 1.57 EUR

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DMTH4014LPDQ-13 DMTH4014LPDQ-13 Hersteller : Diodes Incorporated DMTH4014LPDQ.pdf MOSFETs MOSFET BVDSS: 31V-40V
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.53 EUR
10+1.14 EUR
100+0.78 EUR
500+0.62 EUR
1000+0.56 EUR
2500+0.48 EUR
5000+0.44 EUR
Mindestbestellmenge: 2
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DMTH4014LPDQ-13 DMTH4014LPDQ-13 Hersteller : Diodes Incorporated DMTH4014LPDQ.pdf Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 422500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
15+1.23 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4014LPDQ-13 DMTH4014LPDQ-13 Hersteller : Diodes Zetex dmth4014lpdq.pdf Trans MOSFET N-CH 40V 10.6A Automotive AEC-Q101 8-Pin PowerDI EP T/R
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DMTH4014LPDQ-13 Hersteller : DIODES INCORPORATED DMTH4014LPDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 10.2nC
On-state resistance: 25mΩ
Power dissipation: 2.4W
Application: automotive industry
Drain current: 7.5A
Case: PowerDI5060-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 174A
Type of transistor: N-MOSFET
Kind of channel: enhancement
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