| Anzahl | Preis |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 1.4 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.71 EUR |
| 2500+ | 0.66 EUR |
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Technische Details DMTH43M8LK3-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 88W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V.
Weitere Produktangebote DMTH43M8LK3-13 nach Preis ab 0.78 EUR bis 2.38 EUR
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DMTH43M8LK3-13 | Diodes Incorporated |
 Description: MOSFET N-CHANNEL 40V 100A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 88W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V |
auf Bestellung 905 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH43M8LK3-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
auf Bestellung 905 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 12+ | 1.49 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.78 EUR |