DMTH43M8LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH43M8LK3-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 88W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V.
Weitere Produktangebote DMTH43M8LK3-13 nach Preis ab 0.66 EUR bis 2.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMTH43M8LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 31V-40V |
auf Bestellung 1772 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMTH43M8LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CHANNEL 40V 100A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 88W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V |
auf Bestellung 4985 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| DMTH43M8LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 88W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 88W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 38.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 150A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| DMTH43M8LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 88W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 88W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 38.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 150A |
Produkt ist nicht verfügbar |